INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS - COMMENT

Authors
EICHE C MAIER D WEESE J HONERKAMP J BENZ KW
Citation
C. Eiche et al., INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS - COMMENT, Journal of applied physics, 75(2), 1994, pp. 1242-1242
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
2
Year of publication
1994
Pages
1242 - 1242
Database
ISI
SICI code
0021-8979(1994)75:2<1242:IPFTND>2.0.ZU;2-A
Abstract
It is shown that a recently proposed analysis of deep level transient spectroscopy signals with a regularization method by Batovski et al. [ J. Appl. Phys. 74, 291 (1993)] can be simplified significantly by calc ulating the relaxation time spectrum of the capacitance transient with a regularization method directly.