INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS - COMMENT

Authors
BATOVSKI DA HARDALOV CM
Citation
Da. Batovski et Cm. Hardalov, INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS - COMMENT, Journal of applied physics, 75(2), 1994, pp. 1243-1244
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
2
Year of publication
1994
Pages
1243 - 1244
Database
ISI
SICI code
0021-8979(1994)75:2<1243:IPFTND>2.0.ZU;2-9
Abstract
It is shown that a recently proposed comment on our paper [J. Appl. Ph ys. 74, 291 (1993)] cannot be considered as a significant simplificati on by obtaining the deep level energy spectrum D(E).