DOPING OF GASB SINGLE-CRYSTALS WITH VOLATILE ELEMENTS

Czochralski technique without encapsulant in a flowing atmosphere of h ydrogen was used for the growth of GaSb single crystals doped with eit her sulphur or nitrogen. It has been shown that this method is not sui table for the preparation of GaSb doped with volatile elements because they evaporate during the growth procedure and impair the single crys talline growth. The highest concentration of sulphur in the single cry stals has been found to be < 1.2 x 10(17) atoms cm(-3). At higher conc entrations, GaSb became either polycrystalline or twinned. The growth of N-doped single crystals was similar to that of S-doped GaSb.