DCXS AND RHEED CHARACTERIZATION OF EFFECTIVENESS OF ANNEALING IMPLANTED SI CRYSTALS BY USING PULSED UV EXCIMER-LASER AND SAMPLE SCANNING TECHNIQUE

Authors
AULEYTNER J KOZANKIEWICZ B REGINSKI K
Citation
J. Auleytner et al., DCXS AND RHEED CHARACTERIZATION OF EFFECTIVENESS OF ANNEALING IMPLANTED SI CRYSTALS BY USING PULSED UV EXCIMER-LASER AND SAMPLE SCANNING TECHNIQUE, Crystal research and technology, 29(1), 1994, pp. 93-97
Citations number
4
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
29
Issue
1
Year of publication
1994
Pages
93 - 97
Database
ISI
SICI code
0232-1300(1994)29:1<93:DARCOE>2.0.ZU;2-M
Abstract
In the experiment (111) oriented silicon plates were implanted with 80 keV Ge ions (dose 5 x 10(15) cm(-2)) and with 150 keV Kr ions (dose 5 x 10(15) cm(-2)). Then the samples were annealed with the pulsed exci mer laser by using the sample scanning technique. The effectiveness of the annealing has been analyzed by means of double crystal X-ray spet rometry (DCXS) and reflection high energy electron diffraction (RHEED) . The results of the experiment show that the applied technique of ann ealing considerably improves the perfection of the structure of the im planted silicon crystals.