STOICHIOMETRIC DEPENDENCE OF ELECTRICAL CHARACTERISTICS IN WSSE SINGLE-CRYSTALS GROWN BY DIRECT AND CHEMICAL-VAPOR TRANSPORT TECHNIQUES

Citation
S. Joshi et al., STOICHIOMETRIC DEPENDENCE OF ELECTRICAL CHARACTERISTICS IN WSSE SINGLE-CRYSTALS GROWN BY DIRECT AND CHEMICAL-VAPOR TRANSPORT TECHNIQUES, Crystal research and technology, 29(1), 1994, pp. 109-112
Citations number
8
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
29
Issue
1
Year of publication
1994
Pages
109 - 112
Database
ISI
SICI code
0232-1300(1994)29:1<109:SDOECI>2.0.ZU;2-T
Abstract
Single crystals of tungsten sulphoselenide (WSSe) have been grown by b oth direct and chemical vapour transport techniques. The crystals have been subjected to Hall effect and resistivity measurements for their electrical characterization. The observed differences in the electrica l resistivity, type of conduction, and activation energy have been att ributed to the stoichiometric differences between the crystals grown b y the two techniques. The crystals grown by chemical vapour transport technique with iodine as the transport agent have been found to be mor e stoichiometric.