MICROSTRUCTURE OF BA0.5SR0.5TIO3 THIN-FILMS ON (100)LAALO3 WITH SRRUO3 AS ELECTRODES

Citation
Qx. Jia et al., MICROSTRUCTURE OF BA0.5SR0.5TIO3 THIN-FILMS ON (100)LAALO3 WITH SRRUO3 AS ELECTRODES, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(2), 1997, pp. 261-269
Citations number
17
Categorie Soggetti
Physics, Applied",Mechanics,"Physics, Condensed Matter","Material Science
ISSN journal
13642812
Volume
75
Issue
2
Year of publication
1997
Pages
261 - 269
Database
ISI
SICI code
1364-2812(1997)75:2<261:MOBTO
Abstract
Using pulsed-laser deposition, we grew quaternary Ba0.5Sr0.5TiO3 thin films heteroepitaxially on (100) LaAlO3 substrates with conductive SrR uO3 as a bottom electrode. The microstructure of this multilayer of Ba 0.5Sr0.5TiO3/SrRuO3/LaAlO3, was characterized by X-ray diffraction and cross-sectional transmission electron microscopy. The heteroepitaxial growth relationship was found to be (h00)(Ba0.5Sr0.5TiO3)parallel to( 00l)(SrRuO3)parallel to(h00)(LaAlO3) and [110](Ba0.5Sr0.5TiO3)parallel to [100](SrRuO3)parallel to[110](LaAlO3). The high dielectric constan t of the crystalline Ba0.5Sr0.5TiO3 thin films and the low leakage cur rent of the Ba0.5Sr0.5TiO3 film sandwiched between a top Au and bottom SrRuO3 electrodes are attributed to the structural perfection of the films and the clean interfaces between layers.