PHYSICS OF A-SI-H P-I-N DEVICES

P-i-n diodes give information about electronic transport, metastable d efects and the density of states in a-Si:H. The forward and reverse cu rrents arise from a generation-recombination mechanism involving mid-g ap defect states and can be used to study metastability in an actual d evice structure. Extracting information about electronic processes and junction properties depends on accurate numerical models which are no w available. The application of p-i-n diodes in large matrix addressed image sensor arrays is illustrated.