FABRICATION AND PERFORMANCE OF THIN-FILM TRANSISTORS, TFTS, INCORPORATING DOPED MU-C-SI SOURCE AND DRAIN CONTACTS, AND BORON-COMPENSATED MU-C-SI CHANNEL LAYERS

PH3 doped n(+) mu c-Si, and lightly B2H6 doped intrinsic mu c-Si, i mu c-Si, thin films have been integrated into bottom-gate TFTs. The use of n(+) mu c-Si as a source/drain contact material in a-Si:H TFTs redu ces the threshold voltage compared to n(+) a-Si:H contacts. The use of i mu c-Si as the TFT channel material, combined with a post-depositio n, back-channel exposure to atomic-H yielded low-temperature processed TFTs with effective channel mobilities of similar to 6.5 cm(2)/V-s.