APPLICATION OF THE PHOTO INDUCED DISCHARGE TECHNIQUE FOR THE INVESTIGATION OF A-SI-H THIN-FILM-TRANSISTOR INSTABILITY

Authors
FORTUNATO G CARLUCCIO R MARIUCCI L
Citation
G. Fortunato et al., APPLICATION OF THE PHOTO INDUCED DISCHARGE TECHNIQUE FOR THE INVESTIGATION OF A-SI-H THIN-FILM-TRANSISTOR INSTABILITY, Journal of non-crystalline solids, 166, 1993, pp. 735-738
Citations number
6
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
735 - 738
Database
ISI
SICI code
0022-3093(1993)166:<735:AOTPID>2.0.ZU;2-C
Abstract
Photo Induced Discharge technique has been used in order to probe the density of states at and below the Fermi level before and after positi ve gate bias-stress. From the results presented here, flat-band voltag e variation rather than gap-state modifications seems to be the major effect induced by the bias-stress.