Jp. Kleider et al., DENSITY-OF-STATES IN THIN-FILM TRANSISTORS FROM THE MODULATED PHOTOCURRENT TECHNIQUE - APPLICATION TO THE STUDY OF METASTABILITIES, Journal of non-crystalline solids, 166, 1993, pp. 739-742
We demonstrate the possibility of probing the density of states (DOS)
of the active a-Si:H layer of Thin Film Transistors (TFT) by means of
the modulated photocurrent technique. The DOS deduced from this techni
que on Top Nitride TFTs is compared with values deduced from the subth
reshold slopes of the transfer characteristics. We also study the cons
equences of gate bias stresses on the TFTs. For gate bias stresses up
to +/-30V, we observe a shift in the transfer characteristics along th
e gate voltage axis, but did not measure any significant change in the
DOS above midgap. These results are discussed and compared with those
recently published in the literature by other authors