ACTIVATED HYDROGEN EFFECTS ON THE ELECTRICAL STABILITY OF A-SI-H THIN-FILM TRANSISTORS

Performing a hydrogen plasma before the formation of the silicon dioxi de/ amorphous silicon interface, during the fabrication process of thi n-film transistors, results in an increased electrical instability of the devices. This effect has been interpreted as related to the increa sed defect density in the so called transitional region. The present r esults support the hypothesis that the device instability is controlle d by trapping in slow-states located in the transitional region.