SIMULATIONS ON BACK GATE EFFECTS OF A-SI TFT OFF CURRENT UNDER ILLUMINATION

Authors
NISHIDA S TAKECHI K HIRANO N UCHIDA H
Citation
S. Nishida et al., SIMULATIONS ON BACK GATE EFFECTS OF A-SI TFT OFF CURRENT UNDER ILLUMINATION, Journal of non-crystalline solids, 166, 1993, pp. 755-758
Citations number
3
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
755 - 758
Database
ISI
SICI code
0022-3093(1993)166:<755:SOBGEO>2.0.ZU;2-4
Abstract
We have analyzed numerically back gate effects of a-Si TFT under illum ination with a 2-dimensional device simulator. In this simulator, all localized states were taken into account as recombination centers and as charge trapping centers by Shockley-Read-Hall statistics according to the Simmons-Taylor's analysis. The simulation results explain well the enhancement of the TFT OFF current under illumination and the shou lder-like increase of the dark OFF current which were generally observ ed experimentally.