FABRICATION OF HIGH-PERFORMANCE APCVD A-SI TFT USING ION DOPING

We have studied P ion doping of atmospheric pressure (AP) CVD a-Si. Th e effect of the temperature of ion doping on the electrical conductivi ty was investigated. The conductivity increases with doping temperatur e up to 350 degrees C and then decreases, giving a maximum value of 6x 10(-2)S/cm at 350 degrees C when the acceleration voltage and doping t ime were 6kV and 90s, respectively. The ion-doped a-Si layer was used to fabricate inverse staggered type APCVD a-Si thin film transistors ( TFTs). We obtained a field effect mobility of 1.0 cm(2)/Vs and a thres hold voltage of 6.3V.