ANNEALING EFFECTS OF LOW-PRESSURE MERCURY AND EXCIMER-LASER LIGHT ON DEGRADED A-SI-H TFTS

Authors
LEE SK OH CH KIM YS PARK JS CHOI YI JANG J HAN MK
Citation
Sk. Lee et al., ANNEALING EFFECTS OF LOW-PRESSURE MERCURY AND EXCIMER-LASER LIGHT ON DEGRADED A-SI-H TFTS, Journal of non-crystalline solids, 166, 1993, pp. 763-766
Citations number
6
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
763 - 766
Database
ISI
SICI code
0022-3093(1993)166:<763:AEOLMA>2.0.ZU;2-K
Abstract
We have investigated the effects of ultraviolet CUV) irradiation on th e characteristics of a-Si:H films and a-Si:H TFTs by employing both a low-pressure mercury lamp and an excimer laser. The intensity of the X eCl excimer laser was varied from 10 to 80 mJ/cm(2). The electrical pr operties of a-Si:H films and the characteristics of TFTs that were deg raded by various stresses such as visible light soaking (130,000 Ix, 1 similar to 8 hrs)and electrical stress (30 V, 8 hrs) for a long perio d, recovered considerably to their original states after exposure.