Sk. Lee et al., ANNEALING EFFECTS OF LOW-PRESSURE MERCURY AND EXCIMER-LASER LIGHT ON DEGRADED A-SI-H TFTS, Journal of non-crystalline solids, 166, 1993, pp. 763-766
We have investigated the effects of ultraviolet CUV) irradiation on th
e characteristics of a-Si:H films and a-Si:H TFTs by employing both a
low-pressure mercury lamp and an excimer laser. The intensity of the X
eCl excimer laser was varied from 10 to 80 mJ/cm(2). The electrical pr
operties of a-Si:H films and the characteristics of TFTs that were deg
raded by various stresses such as visible light soaking (130,000 Ix, 1
similar to 8 hrs)and electrical stress (30 V, 8 hrs) for a long perio
d, recovered considerably to their original states after exposure.