A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE

Authors
MOROSANU C CESILE C KOREPANOV S FIORINI P BACCI C MEDDI F EVANGELISTI F MITTIGA A
Citation
C. Morosanu et al., A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE, Journal of non-crystalline solids, 166, 1993, pp. 801-804
Citations number
5
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
801 - 804
Database
ISI
SICI code
0022-3093(1993)166:<801:ABPDWL>2.0.ZU;2-S
Abstract
We have prepared p-i-n particle detectors using for the active layer b oth undoped and slightly boron doped amorphous silicon. The doped devi ces exhibit a much lower depletion voltage. The efficiency improvement s over the undoped ones are limited by the decrease of the mobility-li fetime product of the electrons.