DC AND AC MEASUREMENTS ON METAL A-SI-H/METAL THIN-FILM DEVICES/

Authors
HAJTO J SNELL AJ HU J HOLMES A OWEN AE ROSE MJ GIBSON RAG
Citation
J. Hajto et al., DC AND AC MEASUREMENTS ON METAL A-SI-H/METAL THIN-FILM DEVICES/, Journal of non-crystalline solids, 166, 1993, pp. 821-824
Citations number
6
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
821 - 824
Database
ISI
SICI code
0022-3093(1993)166:<821:DAAMOM>2.0.ZU;2-F
Abstract
The electrical properties of electroformed Cr-amorphous Si:H-V thin fi lm analogue memory structures were investigated by DC and AC conductiv ity measurements. The conduction changes from a semiconducting type to a metallic type as a result of increasing the temperature for a fixed analogue memory state. The transition has been studied in a temperatu re range from 13 K to 300 K. The metal-nonmetal, MNM, transition is fo und to be of a second order, Anderson type transition.