ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE A-SI-H A-SINXH INTERFACE/

Authors
PLASS MF RISTEIN J LEY L
Citation
Mf. Plass et al., ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE A-SI-H A-SINXH INTERFACE/, Journal of non-crystalline solids, 166, 1993, pp. 829-832
Citations number
8
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
829 - 832
Database
ISI
SICI code
0022-3093(1993)166:<829:EASOTA>2.0.ZU;2-D
Abstract
Valence band offsets and band bending were systematically investigated by photoelectron spectroscopy for the a-Si:H/a-SiNx:H heterojunction covering nitrogen concentrations between 0 less than or equal to x les s than or equal to 1.63. The chemical structure and the defect density of the interfaces are determined.