CARRIER TRANSPORT IN A-SI-H A-SI-N AND A-SI-H/A-SI-C MULTILAYERS/

Multilayers of a-Si:N/a-SiN:H and a-Si:H/a-SiC:H were investigated by contactless transient photoconductivity measurements. A faster decay o f the photoconductivity was observed in the a-Si:H/a-SiC:H multilayer whereas the a-Si:H/a-SiN:H multilayer was characterized by a slower de cay relative to a pure a-Si:K Film. These effects are ascribed to defe cts associated with interface states. The electron mobility in the thi n a-Si:H layers of the multilayers does not appear to be appreciably d ifferent from that in pure a-Si:H films.