A POSITION DETECTOR BASED ON THE LATERAL PHOTOEFFECT IN A-SI-H METAL (TI,MO) MULTILAYERS/

The lateral phototeffect. in multilayer systems (MLS) consisting of te n to thirty periods of alternately sputtered hydrogenated amorphous si licon (a-Si:H) and transition metals (Ti,Mo) was investigated. photoel ectric measurements were performed in coplanar and sandwich electrode configuration. X-rag diffraction (XRD), small angle X-ray scattering ( SAXS) and X-ray reflectometry under grazing incidence (GIR) were used to investigate the structure of the multilayer systems. We found that metal sublayers of optimized position detecting devices do not: form c ontinuous layers but. metal clusters of around 6nm in diameter and an average separation of 16nm.