RADIATIVE TRANSITION WITH VISIBLE-LIGHT IN CRYSTALLIZED A-GE-H A-SINX-H MULTI-QUANTUM-WELL STRUCTURES/

Crystallized a-Ge:H/a-SiNx:H multiquantum-well (MQW) structures were p repared by a computer controlled plasma enhanced chemical vapor deposi tion method and then crystallized by Ar+ laser annealing technique. Th e layered structures and the crystallinity of the samples were determi ned by means of X-ray diffraction (XRD) spectroscopy. The crystallized samples showed a radiative transition with visible light as the Ge we ll layer thickness was less than 4 nm. This may preliminary be explain ed by the quantum confinement of electrons and holes.