AMORPHOUS SILICIDE FORMATION IN THE CR AMORPHOUS SILICON SYSTEM/

The solid state reactions between Cr and undoped a;Si:H and a-Si have been investigated to reveal the kinetics of silicide formation. For th e Cr/PECVD a-Si:H system, an amorphous Cr silicide (alloy) forms at th e interface even at room temperature (RT). The compositional ratio of Cr to Si in the a-silicide layer formed at RT was found to be about 5% . On the other hand, in a Cr/sputtered a-Si system at RT an interfacia l amorphous layer also exists, bat its thickness is negligible. The ki netics of the low temperature interaction are discussed.