AMORPHOUS-SILICON ON TIO2 - CHARGE-TRANSFER AND INTERFACE STRUCTURE

Authors
WAHI A HOYER P KONENKAMP R
Citation
A. Wahi et al., AMORPHOUS-SILICON ON TIO2 - CHARGE-TRANSFER AND INTERFACE STRUCTURE, Journal of non-crystalline solids, 166, 1993, pp. 869-872
Citations number
5
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
869 - 872
Database
ISI
SICI code
0022-3093(1993)166:<869:AOT-CA>2.0.ZU;2-H
Abstract
We report on results on the sensitization of TiO2 using a-Si:H as a se nsitizer. Employing a sol-gel method colloidal TiO2 films with large a nd topologically rough surfaces have been prepared. A-Si:H films were deposited on top of the set-gel firms serving as optical absorber and electron injector. Interface structure, carrier transfer across the in terface and transport through the TiO2 were studied. Applications for a photovoltaic device are discussed.