OPTICAL CONTRAST FORMATION IN A-SI1-XCX-H FILMS BY ION-IMPLANTATION

The formation of optical contrast in a-Si1-xCx:H alloy films by ion im plantation with Ar and group IV elements has been investigated. The in creased disorder and additional chemical modification of a-Si1-xCx:H, induced by the implantation of Ge or Sn, results in a considerable cha nge of the optical properties. Darkening of the implanted films, demon strated by absorption edge shift to the lower photon energies, has bee n registered, varying with the dose, implanted element and alloy compo sition. The accompanying change in the optical gap and absorption coef ficient has been derived from the transmission, reflection and PDS (ph otodeflection spectroscopy) measurements.