ELECTRONIC AND STRUCTURAL-PROPERTIES OF POROUS SILICON

Authors
STUTZMANN M BRANDT MS BUSTARRET E FUCHS HD ROSENBAUER M HOPNER A WEBER J
Citation
M. Stutzmann et al., ELECTRONIC AND STRUCTURAL-PROPERTIES OF POROUS SILICON, Journal of non-crystalline solids, 166, 1993, pp. 931-936
Citations number
16
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
931 - 936
Database
ISI
SICI code
0022-3093(1993)166:<931:EASOPS>2.0.ZU;2-4
Abstract
We review recent results concerning the structural properties and the origin of visible luminescence in porous silicon. The preparation of p orous silicon is briefly described and current models for radiative re combination in porous Si are discussed. Special attention is given to a comparison between the properties of porous Si and those of siloxene and amorphous Si:O:H alloys, based on vibrational, optical, and spin resonance spectroscopy.