POLYSILICON PRODUCED BY EXCIMER (ARF) LASER CRYSTALLIZATION AND LOW-TEMPERATURE (600-DEGREES-C) FURNACE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H)

Authors
DYER TE MARSHALL JM PICKIN W HEPBURN AR DAVIES JF
Citation
Te. Dyer et al., POLYSILICON PRODUCED BY EXCIMER (ARF) LASER CRYSTALLIZATION AND LOW-TEMPERATURE (600-DEGREES-C) FURNACE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H), Journal of non-crystalline solids, 166, 1993, pp. 1001-1004
Citations number
10
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
1001 - 1004
Database
ISI
SICI code
0022-3093(1993)166:<1001:PPBE(L>2.0.ZU;2-9
Abstract
We report on the opto-electronic and structural properties of polysili con produced by excimer (ArF) laser crystallisation of undoped hydroge nated amorphous silicon (a-Si:H). Micro structure and average grain si ze are determined by TEM and electron diffraction. A maximum areal gra in size of 0.1 mu m(2) is observed in excimer (ArF) laser crystallised polysilicon. UV reflectivity and FTIR spectroscopy are employed to in vestigate the degree of crystallinity and atomic bonding configuration s. These data are compared with studies of low-temperature (600 degree s C) furnace crystallised polysilicon.