ELECTRONIC DENSITY-OF-STATES IN A-SIC-H FILMS

Authors
DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E AMATO G HERREMANS H GREVENDONK W RAVA P
Citation
F. Demichelis et al., ELECTRONIC DENSITY-OF-STATES IN A-SIC-H FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1015-1018
Citations number
8
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
1015 - 1018
Database
ISI
SICI code
0022-3093(1993)166:<1015:EDIAF>2.0.ZU;2-J
Abstract
In the present work we investigate the effects of carbon on the distri bution of gap density of states (DOS) in device quality a-SiC:H films. Information on the DOS been obtained through the deconvolution of opt ical absorption spectra, as obtained by CPM and PDS, and through ESR a nd OMS techniques.