Authors
Citation
Jp. Xanthakis, ELECTRONIC-STRUCTURE AND BAND - GAP STUDY OF SI1-XCX, Journal of non-crystalline solids, 166, 1993, pp. 1019-1022
Citations number
12
Categorie Soggetti
Material Science, Ceramics
Journal title
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
1019 - 1022
Database
ISI
SICI code
0022-3093(1993)166:<1019:EAB-GS>2.0.ZU;2-O
Abstract
The electronic structure of Si1-xCx has been calculated, in the region
x > 0.5 in terms of x, the ratio of sp(2) sites a and the short-range
order parameters. By comparing E(g)(x) to the experimental gaps we de
duce that in the low hydrogenation limit the material is close to chem
ical order and that for high a, E(g) (x) displays a hump, whereas at t
ow a it is monotonic.