SI K-, SI L- AND CK-EMISSION BANDS AND ELECTRONIC-STRUCTURE OF AMORPHOUS SI1-XCX-H ALLOYS

The X-ray Si K-, Si L- and C K-emission bands of a series of amorphous hydrogenated silicon-carbon alloy films (a-Si1-xCx:H, 0 less than or equal to x less than or equal to 0.78) have been measured to study the electronic structure and the local silicon and carbon bonding of thes e alloys. The spectral features in the emission bands are identified a nd attributed to Si 3p, Si 3s/3d and C 2s/2p derived states. The spect ra are compared with available UPS measurements on a common energy sca le. - The results indicate that in these alloy films heteroatomic bond s are preferred.