RELATIONS AMONG STRUCTURAL AND OPTOELECTRONIC PROPERTIES IN A-SIC-H FILMS WITH HIGH-C CONTENT AND HIGH PHOTOCONDUCTIVITY

a-SiC:H films with high carbon to silicon ratio (from 0.3 to 0.7) have been grown by RF plasma decomposition of CH, and SIH, mixtures with a nd without hydrogen dilution and at different substrate temperatures. Their structural and optoelectronic properties are compared and discus sed. The obtained results clearly indicate that H, dilution and high s ubstrate temperature lead to highly photoconductive films, with premin ent tetrahedral bonds and low defect density.