PREPARATION OF A-SIXC1-X-H FILMS BY A SEPARATELY-EXCITED-PLASMA CVD METHOD

In order to prepare high quality hydrogenated amorphous silicon carbid e (a-SixCl1-x:H) films with a wide band gap, we propose a separately-e xcited-plasma CVD system which is composed of two independent plasma c hambers and one deposition chamber. This method enables control of the methane and silane plasmas independently. The structural disorder in the films prepared by this method is smaller than that obtained by the conventional plasma CVD method. This suggests that the separately-exc ited-plasma CVD method is effective for preparing high quality a-SixC1 -x:H films.