DEFECTS IN AMORPHOUS HYDROGENATED SILICON-NITRIDE FILMS

Authors
KANICKI J WARREN WL
Citation
J. Kanicki et Wl. Warren, DEFECTS IN AMORPHOUS HYDROGENATED SILICON-NITRIDE FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1055-1060
Citations number
40
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
1055 - 1060
Database
ISI
SICI code
0022-3093(1993)166:<1055:DIAHSF>2.0.ZU;2-4
Abstract
In this paper we review the structural identification and electronic p roperties of the K- and N-centers, and positive charges in as-deposite d and UV-illuminated amorphous silicon nitride thin films.