BRIDGING NITROGEN DANGLING BOND CENTERS AND ELECTRON TRAPPING IN AMORPHOUS NH3-NITRIDED AND REOXIDIZED NITRIDED-OXIDE FILMS

We present evidence supporting the designation of the bridging nitroge n center as the dominant electron trap in NH3-nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron hig hly localized in a nearly pure 2p-orbital of a nitrogen atom bonded tw o silicon atoms, is also present in many other silicon oxynitride diel ectrics. We provide evidence suggesting the precursor is of the form ( =Si)(2)NH.