STRUCTURE OF HIGH-PHOTOSENSITIVITY SILICON OXYGEN ALLOY-FILMS

Authors
WATANABE H HAGA K LOHNER T
Citation
H. Watanabe et al., STRUCTURE OF HIGH-PHOTOSENSITIVITY SILICON OXYGEN ALLOY-FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1085-1088
Citations number
9
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
1085 - 1088
Database
ISI
SICI code
0022-3093(1993)166:<1085:SOHSOA>2.0.ZU;2-F
Abstract
Amorphous silicon-oxygen alloy films with various composition have bee n prepared by r.f. glow discharge decomposition of SiH4 and CO2 gas mi xtures. The analysis of infrared absorption spectra and x-ray photoemi ssion spectra shows that the film consists of two phases, a silicon-ri ch phase and an oxygen-rich phase. We suggest that this two-phase stru cture results in the high photoconductivity with wide optical gap in t hese films.