DENSITY-OF-STATES OF A-SI1-YNIY-H ALLOYS DETERMINED BY X-RAY AND OPTICAL SPECTROSCOPIES

Citation
A. Gheorghiu et al., DENSITY-OF-STATES OF A-SI1-YNIY-H ALLOYS DETERMINED BY X-RAY AND OPTICAL SPECTROSCOPIES, Journal of non-crystalline solids, 166, 1993, pp. 1097-1100
Citations number
9
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
1097 - 1100
Database
ISI
SICI code
0022-3093(1993)166:<1097:DOAADB>2.0.ZU;2-K
Abstract
The density of valence states of amorphous hydrogenated silicon-nickel a-Si1-yNiy:H alloys has been experimentally investigated by soft X-ra y emission (SXS) and optical spectroscopies. By SXS, partial Si 3p and Ni 3d valence states are obtained on a common energy scale referred t o the Fermi level. Our results show that, as the Ni content is increas ed, the uppermost valence band changes from Si 3p to hybridized Si 3p- Ni 3d states, leading to a finite density of states at the Fermi level . The results are discussed in relation to optical measurements perfor med on samples deposited at the same time.