TETRAHEDRAL AMORPHOUS-CARBON PROPERTIES AND APPLICATIONS

Citation
Dr. Mckenzie et al., TETRAHEDRAL AMORPHOUS-CARBON PROPERTIES AND APPLICATIONS, Journal of non-crystalline solids, 166, 1993, pp. 1101-1106
Citations number
14
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
2
Pages
1101 - 1106
Database
ISI
SICI code
0022-3093(1993)166:<1101:TAPAA>2.0.ZU;2-I
Abstract
Tetrahedral amorphous carbon (ta-C) is a new semiconductor which is ab le to accept dopants and shows photoconductivity. It may be convenient ly deposited at room temperature onto plastic substrates. It is found to be stable at temperatures up to 700 degrees C. A computer based mol ecular dynamics study is used to illustrate the generation of compress ive stress which favours the formation of ta-C. Results for photocondu ctivity and dark conductivity of pure and doped materials are presente d. The film thickness dependence of film properties are correlated wit h the results of electron energy loss spectroscopy. The results sugges t that ta-C JFET devices may perform better than MOSFET devices.