Tetrahedral amorphous carbon (ta-C) is a new semiconductor which is ab
le to accept dopants and shows photoconductivity. It may be convenient
ly deposited at room temperature onto plastic substrates. It is found
to be stable at temperatures up to 700 degrees C. A computer based mol
ecular dynamics study is used to illustrate the generation of compress
ive stress which favours the formation of ta-C. Results for photocondu
ctivity and dark conductivity of pure and doped materials are presente
d. The film thickness dependence of film properties are correlated wit
h the results of electron energy loss spectroscopy. The results sugges
t that ta-C JFET devices may perform better than MOSFET devices.