EXTRACTION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR INTERFACE STATE AND TRAPPED CHARGE SPATIAL DISTRIBUTIONS USING A PHYSICS-BASED ALGORITHM

In this article, a new charge-extraction algorithm is proposed for ext racting the spatial distributions of hot-carrier-induced interface sta tes and trapped charges in p- and n- metal-oxide-semiconductor field-e ffect transistors, based on the charge-pumping measurement data. This extraction algorithm is physics based and provides a better understand ing of how the presence of hot-carrier-induced trapped charges and int erface states affect the charge-pumping curves. The extraction time fo r this new algorithm is very fast (typically 30 s) and does not requir e very tedious computer simulation. The verification of this method wa s performed using TSUPREM-4 and MEDICI simulations. With this new extr action method, one can gain better insight into the degradation mechan isms taking place under different hot-carrier stressing conditions. (C ) 1997 American Institute of Physics.