OBSERVATION OF LASING FROM PHOTOPUMPED INGAN GAN HETEROSTRUCTURES IN AN EDGE EMITTING CONFIGURATION/

Optically pumped lasing from InGaN/GaN single heterojunctions (SH) was observed in an edge emitting configuration at 77 K. The heterojunctio ns were grown by atmospheric pressure metalorganic chemical vapor depo sition on c-plane sapphire substrates. The frequency tripled output of a mode-locked titanium:sapphire laser with a pulse width of 250 fs, o perating at 280 nm, was used as the photoexcitation source. The nonlin ear dependence of output emission intensity on input power density, th e observations of a strongly polarized output emission, and distinct F abry-Perot modes are discussed. (C) 1997 American Institute of Physics .