ANOMALOUS CAPACITANCE-VOLTAGE PROFILES IN QUANTUM-WELLS EXPLAINED BY A QUANTUM-MECHANICAL MODEL

We have developed a quantum mechanical model for understanding and exp laining the capacitance-voltage (C-V) carrier profiles observed in qua ntum wells (QW). The external field imposed on the QW during C-V profi ling changes the carrier distribution of the system. This model consid ers the effects of field and quantum confinement of the carriers in th e well. The results obtained by iterative solutions of Schrodinger's a nd Poisson's equations give a better understanding of the experiments than the previous models where quantum confinement is ignored. (C) 199 7 American Institute of Physics.