T. Inoue et al., CHARACTERIZATION OF EPITAXIALLY GROWN CEO2(110) LAYERS ON SI BY MEANSOF SHADOWING PATTERN IMAGING WITH FAST-ION BEAMS, JPN J A P 2, 33(1B), 1994, pp. 120000139-120000142
Shadowing pattern imaging using keV secondary electrons induced by 56
MeV O8+ ions has been applied to investigate the texture structure of
epitaxially grown CeO2(100) layers on Si(100) substrates. The observed
shadowing pattern is characteristic of the crystal with a domain stru
cture, i. e., a clear (110) axial image and smeared planar images, whi
ch result from the overlapping of two kinds of planar patterns (one is
rotated 90 degrees from the other around the (110) axis). The results
are consistent with the observations by high-resolution secondary ele
ctron microscopy and reflection high-energy electron diffraction.