CHARACTERIZATION OF EPITAXIALLY GROWN CEO2(110) LAYERS ON SI BY MEANSOF SHADOWING PATTERN IMAGING WITH FAST-ION BEAMS

Shadowing pattern imaging using keV secondary electrons induced by 56 MeV O8+ ions has been applied to investigate the texture structure of epitaxially grown CeO2(100) layers on Si(100) substrates. The observed shadowing pattern is characteristic of the crystal with a domain stru cture, i. e., a clear (110) axial image and smeared planar images, whi ch result from the overlapping of two kinds of planar patterns (one is rotated 90 degrees from the other around the (110) axis). The results are consistent with the observations by high-resolution secondary ele ctron microscopy and reflection high-energy electron diffraction.