MODIFICATION OF N-SI(100) SURFACE BY SCANNING TUNNELING MICROSCOPE TIP-INDUCED ANODIZATION UNDER NITROGEN ATMOSPHERE

A hydrogen-terminated silicon (Si) surface was modified under nitrogen atmosphere by the use of a scanning tunneling microscope (STM). Nanos cale silicon oxide (SiOx) patterns were fabricated by STM tip-induced oxidation of Si with adsorbed water. Oxide formation was promoted in t he sample bias range of +2.0 similar to +10.0 V (tip-induced anodizati on) 6-28 times as efficiently as that in the bias range of -3.0 simila r to -5.0 V (field-enhanced oxidation). The spatial resolution of SiO, patterns was improved by increasing the tip scan rate, and line patte rns of similar to 20 nm in width were obtained under the optimized con ditions.