MOLECULAR-BEAM EPITAXY OF COMPOUND SEMICONDUCTORS

Authors
Citation
Jr. Arthur, MOLECULAR-BEAM EPITAXY OF COMPOUND SEMICONDUCTORS, Surface science, 300(1-3), 1994, pp. 818-823
Citations number
35
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
300
Issue
1-3
Year of publication
1994
Pages
818 - 823
Database
ISI
SICI code
0039-6028(1994)300:1-3<818:MEOCS>2.0.ZU;2-1
Abstract
Molecular beam epitaxy (MBE) is a textbook application of surface scie nce which makes direct use of many of the tools for characterizing cle an surfaces. The development of MBE coincided with the development of these tools and thus the history of MBE is an important part of the hi story of modern surface science. A subjective recounting of the early history of MBE is presented, along with some biased conjectures about the future.