MECHANISMS OF GAAS ATOMIC LAYER EPITAXY - A REVIEW OF PROGRESS

In this article we review the surface chemistry of several precursors for the growth of GaAs. Specifically, we discuss trimethylgallium, tri ethylgallium, and arsine. Our discussion focuses on the importance of surface chemistry in achieving atomic layer epitaxy (ALE) of GaAs. Whi le ALE has been the subject of numerous publications, a thorough under standing of the mechanism(s) of GaAs ALE has not been attained. We wis h to illustrate how surface science experiments have helped in the. se arch for a complete understanding. More generally, the results discuss ed in this paper are relevant to gas source molecular beam epitaxy, me tal organic molecular beam epitaxy, organometallic vapor phase epitaxy , and chemical beam epitaxy.