VUV PHOTOELECTRIC YIELD SPECTRA IN THIN-FILMS OF KCL, KBR AND RBCL AT80 K

Relative photoelectric yield spectra of thin films in KCI, KBr and RbC l are investigated in the photon energy 7 eV-40 eV range at 80 K as we ll as at room temperature. Several new characteristics of the spectra due to the thin film specimens and due to the lower temperature are ob served. It is revealed that the yield spectra dominantly reflect the p hoto-absorptions modified by the inelastic electron-electron scatterin g in the valence excitation region and by the Auger process especially in the core excitation region. A large yield peak due to the next dee per core level K(+)3s or Rb(+)4s is newly identified in a photon energ y range of 30-40 eV. Interband thresholds of the yield spectra are obs erved and the electron affinities are derived.