The crosstalk characteristics of a long-wavelength monolithically inte
grated photoreceiver array are analyzed. The device consists of an arr
ay of transimpedance photoreceivers fabricated on a semi-insulating In
P substrate. The distance between the photodetectors is large enough t
o suppress the photonic crosstalk. Therefore, the crosstalk of the dev
ice is mainly due to signal propagation from the channels through the
power line shared by each channel on the chip. This crosstalk is inevi
table to the photoreceiver arrays which employ common power lines. The
magnitude of the crosstalk largely depends on the impedance of the po
wer-supply circuit outside the chip. The crosstalk spectrum often has
a peak and recess structure. The crosstalk peak al the edge of the ope
rating band-width is due to the resonance characteristic of the transi
mpedance amplifier. The other peak and recess structures on the spectr
um are due to the resonance phenomena of on-chip and off-chip capacito
rs and inductance on the power-supply line outside the chip. This cros
stalk can be reduced by using on-chip bypass capacitance and dumping r
esistance. However, the resonance due to the capacitance and inductanc
e on the power-supply circuit outside the chip can't be controlled by
the on-chip components. Therefore, an optimized design for the power s
upply circuit outside the chip is also indispensable for suppressing c
rosstalk.