RAPID THERMAL PROCESS-INDUCED DEFECTS IN SILICON POSITION DETECTORS

Authors
ALIETTI M NAVA F TONINI R CANTONI P STAGNI L CAVALLINI A
Citation
M. Alietti et al., RAPID THERMAL PROCESS-INDUCED DEFECTS IN SILICON POSITION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 337(2-3), 1994, pp. 394-402
Citations number
37
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
337
Issue
2-3
Year of publication
1994
Pages
394 - 402
Database
ISI
SICI code
0168-9002(1994)337:2-3<394:RTPDIS>2.0.ZU;2-H