In order to clarify the effect of tin addition on the secondary recrys
tallization of Fe-3%Si, the behavior of grain growth during secondaril
y recrystallizing annealing was investigated by SEM-ECC-ECP method. Ti
n addition accelerates remarkably (110) [001]-oriented secondary recry
stallization. Tin is confirmed to segregate on the grain boundary of t
he tin-added specimen. The (110) [001] grain is appproximately in the
Sigma 9 coincidence orientation in relation to the {111} [112] grain,
close to which the main orientation is located in primary matrix of th
e specimen. It is considered that the relative migration rate of Sigma
9 coincidence boundaries comparing with other ones is increased throu
gh the tin segregation.