GROWTH OF ORIENTED DIAMOND ON SINGLE-CRYSTAL OF SILICON-CARBIDE (0001)

Authors
SUZUKI T YAGI M SHIBUKI K
Citation
T. Suzuki et al., GROWTH OF ORIENTED DIAMOND ON SINGLE-CRYSTAL OF SILICON-CARBIDE (0001), Applied physics letters, 64(5), 1994, pp. 557-559
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
5
Year of publication
1994
Pages
557 - 559
Database
ISI
SICI code
0003-6951(1994)64:5<557:GOODOS>2.0.ZU;2-L
Abstract
Diamond was deposited on a (0001) plane of an alpha-silicon carbide si ngle crystal by the microwave method. The substrate surface was cleane d by pretreatment with hydrogen gas at 1200 degrees C. Cube-octahedral diamond crystals with (111)(D) parallel to(0001)(SiC) were obtained.