EPITAXIAL-GROWTH OF CADMIUM-SULFIDE LAYERS ON INDIUM-PHOSPHIDE FROM AQUEOUS AMMONIA SOLUTIONS

Epitaxial growth of cadmium sulfide on indium phosphide monocrystals h as been achieved by using chemical deposition from cadmium ammonia-thi ourea aqueous solutions. The epitaxial growth takes place on InP ((111 ) over bar) substrates with-the c axis of hexagonal CdS perpendicular to the surface. The epitaxy relations are determined by means of elect ron diffraction techniques. The deposition conditions appear to be fle xible with reaction temperatures ranging from 60 to 90 degrees C, and growth rates about 0.1-0.5 mu m h(-1).