DIAMOND(001) SINGLE-DOMAIN 2X1 SURFACE GROWN BY CHEMICAL-VAPOR-DEPOSITION

Diamond homoepitaxial films were grown on an off-angle (001) substrate with a misorientation of 4.3 degrees toward the [110] direction by mi crowave plasma-assisted chemical vapor deposition from a methane-hydro gen gas mixture. The single domain 2x1 surface was observed by low-ene rgy electron diffraction (LEED) and scanning tunneling microscopy, aft er growth with methane concentration of 2%. With a methane concentrati on of 6%, the LEED superstructure spot intensity from another domain i ncreased, suggesting a higher rate of two-dimensional nucleation.