SURFACE RESONANT-TUNNELING TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE

Authors
KURDAK C TSUI DC PARIHAR S SANTOS MB MANOHARAN HC LYON SA SHAYEGAN M
Citation
C. Kurdak et al., SURFACE RESONANT-TUNNELING TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE, Applied physics letters, 64(5), 1994, pp. 610-612
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
5
Year of publication
1994
Pages
610 - 612
Database
ISI
SICI code
0003-6951(1994)64:5<610:SRT-AN>2.0.ZU;2-A
Abstract
A new three-terminal device, the surface resonant tunneling transistor , is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative tran sconductance as well as negative differential resistance. Some possibi lities for future applications of the device to low-power logic circui ts are discussed.